PERFORMANCE OF QUANTUM DOT BASED INTERMEDIATE BAND SOLAR CELLS

Shweta Bansal; C B  Vinutha; Mandan Mishra

PERFORMANCE OF QUANTUM DOT BASED INTERMEDIATE BAND SOLAR CELLS

Authors

Shweta Bansal K.R. Mangalam University, Gurugram, Haryana, INDIA
C B Vinutha Sri Siddhartha Academy of Higher Education
Mandan Mishra Sandip University (Sijoul)

Keywords:

Engineering, solar photovoltaic technology, Solar Cells, efficiency limit

Abstract

Renewable energy sources are becoming more important due to fossil fuel depletion and the risk that climate change would raise average temperatures and the frequency and intensity of catastrophic weather occurrences. The depletion of fossil resources and the widespread worry that climate change may increase the frequency and intensity of catastrophic weather occurrences are further factors. Climate change and the depletion of fossil resources are expected to aggravate all three of these causes in the coming decades. Solar energy can compete with fossil fuels and provide unlimited, ecologically beneficial electricity. Both options are promising for the energy business. Solar photovoltaic technology increases production and cost-effectiveness. Increase sunlight-to-electricity conversion. Shockley and Queisser found that light-to-electricity conversion has a maximum efficiency. Two scientists found this top limit. They found that a single-gap solar cell may peak at 30% efficiency. Intermediate band solar cells (IBSCs) can exceed this barrier with a theoretical efficiency limit of 63% under maximum light concentration, maximum absorption, and well-tuned energy levels below the bandgap. This allows breaking the restriction. This is because IBSCs have a higher maximum absorption rate than regular solar cells. IBSCs have an intermediate band (IB) between a material's valence and conduction bands. This band absorbs two photons below the bulk material's bandgap. It performs this way. The band's goal. This method aims to use more of the solar spectrum to harvest more solar energy. Quantum dot (QD) architectures introduced unique energy levels within single-bandgap devices, which were utilised to construct IBSCs as intermediary levels. Quantum dot (QD) architectures incorporated these energy levels into the devices. Quantum dot (QD) structures incorporated these unique energy levels into the devices, making them practical and functional. The most extensive QD-IBSC research has focused on InAs and GaAs devices. InAs QDs implanted into GaAs provide intermediate energy levels for sub-bandgap photon absorption. The significant thermal escape of carriers from the IB to the CB causes the quantum dot solar cell (QDSC) to lose open-circuit voltage (VOC) and absorption volume. Carriers' substantial heat escape causes these issues. These issues stem from carriers losing a lot of heat energy. These issues stem from carriers wasting a lot of heat. This is done to improve device-level understanding of InAs/GaAs QDSCs. To clarify, the purpose is to examine the causes of QDSCs' underperformance and provide remedies.

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PERFORMANCE OF QUANTUM DOT BASED INTERMEDIATE BAND SOLAR CELLS